Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2)

Opt Express. 2010 Jan 18;18(2):1462-8. doi: 10.1364/OE.18.001462.

Abstract

We report on the improvement of light output power of InGaN/GaN blue light-emitting diodes (LEDs) by lateral epitaxial overgrowth (LEO) of GaN using a pyramidal-shaped SiO(2) mask. The light output power was increased by 80% at 20 mA of injection current compared with that of conventional LEDs without LEO structures. This improvement is attributed to an increased internal quantum efficiency by a significant reduction in threading dislocation and by an enhancement of light extraction efficiency by pyramidal-shaped SiO(2) LEO mask.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Crystallization / methods*
  • Energy Transfer
  • Equipment Design
  • Equipment Failure Analysis
  • Gallium / chemistry*
  • Indium / chemistry*
  • Lighting / instrumentation*
  • Semiconductors*
  • Silicon Dioxide / chemistry*

Substances

  • Indium
  • gallium nitride
  • Silicon Dioxide
  • Gallium