Technology aspects, structure and characteristic properties of the atmospheric barrier torch discharge technique grown nominally pure and Al (0.1-5%) and Mn (0.05-0.5%) doped ZnO nanocrystalline thin films deposited on fused quartz substrates are reported. The set of films with various thicknesses in the range from 70 nm to 1000 nm were prepared for each composition. XRD and AFM analysis show well formed [001] preferably oriented hexagonal high quality films witch could be operatively fabricated in air atmosphere with controlled grain size. All films under study revealed n-type conductivity except some Mn doped films, which revealed p-type. Spectroscopic optical ellipsometry and luminescence spectroscopy studies evidenced luminescence properties typical for well formed ZnO and appreciable influence of Al doping and grain size on the optical absorption edge. Al doping shifts strongly absorption edge to the higher energies. The grain size decreasing (from 100 to 15 nm) leads to distinct diffusing of the absorption edge accompanied by increase of absorption in the near band edge region. For the smallest grains the pronounced Urbach-type absorption tail can be observed manifesting films inhomogeneity development.