A 1 A laser driver in 0.35 microm complementary metal oxide semiconductor technology for a pulsed time-of-flight laser rangefinder

Jan Nissinen; Juha Kostamovaara

doi:10.1063/1.3242275

A 1 A laser driver in 0.35 microm complementary metal oxide semiconductor technology for a pulsed time-of-flight laser rangefinder

Rev Sci Instrum. 2009 Oct;80(10):104703. doi: 10.1063/1.3242275.

Authors

Jan Nissinen¹, Juha Kostamovaara

Affiliation

¹ Department of Electrical and Information Engineering, Electronics Laboratory, University of Oulu, P.O. Box 4500, Linnanmaa FIN-90014, Finland.

PMID: 19895081
DOI: 10.1063/1.3242275

Abstract

An integrated complementary metal oxide semiconductor (CMOS) current pulse generator is presented which achieves an ampere-scale peak current pulse with a rise time and pulse width of less than 1 and 2.5 ns (pulse width at half maximum), respectively. The generator is implemented in a 0.35 microm CMOS process and consists of four parallel n-type metal oxide semiconductor transistors driven by a scaled buffer chain to achieve fast switching.