Signal amplification by 1/f noise in silicon-based nanomechanical resonators

Nano Lett. 2009 Sep;9(9):3096-9. doi: 10.1021/nl9004546.

Abstract

We report signal amplification by 1/f(alpha) noise with stochastic resonance in a nonlinear nanomechanical resonator. The addition of 1/f(alpha) noise to a subthreshold modulation signal enhances the probability of an electrostatically driven resonator switching between its two vibrational states in the hysteretic region. Considering the prevalence of 1/f noise in the materials in integrated circuits, signal enhancement demonstrated here, using a fully on-chip electronic actuation/detection scheme, suggests beneficial use of the otherwise detrimental noise.

Publication types

  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Computer Simulation
  • Electrodes
  • Electronics / instrumentation
  • Nanotechnology / instrumentation*
  • Nonlinear Dynamics
  • Radio Waves
  • Silicon*
  • Static Electricity
  • Stochastic Processes
  • Time Factors
  • Vibration

Substances

  • Silicon