Photoluminescence enhancement in Yb(3+):Er(3+)co-doped eutectic Al(2)O(3): SiO(2) thin films by 980nm excitation

Qi Song; Jingsong Gao; Xiaoyi Wang; Hong Chen; Tongtong Wang; Xuanming Zheng; Cheng-Ren Li; Chang-Lie Song

doi:10.1364/oe.15.003948

Photoluminescence enhancement in Yb(3+):Er(3+)co-doped eutectic Al(2)O(3): SiO(2) thin films by 980nm excitation

Opt Express. 2007 Apr 2;15(7):3948-54. doi: 10.1364/oe.15.003948.

Authors

Qi Song, Jingsong Gao, Xiaoyi Wang, Hong Chen, Tongtong Wang, Xuanming Zheng, Cheng-Ren Li, Chang-Lie Song

PMID: 19532637
DOI: 10.1364/oe.15.003948

Abstract

Si nanocrystals (nc-Si) are addressed in the eutectic Al(2)O(3):SiO(2) thin films co-doped with Er(3+) and Yb(3+) by the laser-induced crystallization (LIC). The thin films are originally synthesized on a silica-on-silicon (SOS) substrate by the microwave electron cyclotron resonance (MW-ECR) plasma source enhanced RF sputtering. Raman spectroscopy has revealed that the strong crystallization occurs with the emergence of the nc-Si in the eutectic Al(2)O(3): SiO(2) layer during the liquid phase transformation. The dual wavelength energy transfer mechanism at 800nm and 980nm induced by 980nm excitation in nc-Si and Yb sensitized Er doped system has been proposed and demonstrated. A tenfold photoluminescence enhancement has been obtained from this mechanism.