A diode side-pumped KTiOAsO4 Raman laser

Opt Express. 2009 Apr 27;17(9):6968-74. doi: 10.1364/oe.17.006968.

Abstract

A KTiOAsO(4) Raman laser is realized within a diode side-pumped acousto-optically Q-switched Nd:YAG laser. Efficient nanosecond first-Stokes generations at 1091.4 nm are obtained with three 30-mm-long KTA crystals. Under an incident diode power of 60.9 W and a pulse repetition rate of 4 kHz, a first-Stokes power of 4.55 W is obtained, corresponding to a diode-to-Stokes conversion efficiency of 7.5%. The single pulse energy is up to 1.14 mJ and the peak power is 18.0 kW.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Computer-Aided Design
  • Equipment Design
  • Equipment Failure Analysis
  • Lasers, Solid-State*
  • Reproducibility of Results
  • Sensitivity and Specificity
  • Spectrum Analysis, Raman / instrumentation*