Incorporation of dopants in optoelectronic semiconductor nanostructures has been a matter of great interest in recent times. While such doping has been performed almost routinely using physical methods, use of low-cost chemical techniques for that purpose is still rare. We incorporated antimony in zinc oxide (ZnO) nanostructures through a low temperature hydrothermal method. In as-grown nanostructures, antimony remains partially in Sb2O3 phase. On thermal annealing at 500 degrees C, it dissociates and antimony incorporates into ZnO mainly by substituting zinc from the crystal lattice. Incorporation of Sb drastically modifies the morphology of the ZnO nanostructures. While incorporation of Sb in low concentration promotes the formation of uniform prismatic ZnO nanorods probably due to catalytic effect, high concentration of Sb causes the formation of rounded shaped nanoparticles due to high interfacial compressive stress. Incorporated Sb in the ZnO nanostructures remains inhomogeneously distributed. The optical band gap of the ZnO nanostructures increases a bit for lightly doped samples but it decreases for heavy doping.