3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film

M Kodzuka; T Ohkubo; K Hono; F Matsukura; H Ohno

doi:10.1016/j.ultramic.2008.11.011

3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film

Ultramicroscopy. 2009 Apr;109(5):644-8. doi: 10.1016/j.ultramic.2008.11.011. Epub 2008 Dec 3.

Authors

M Kodzuka¹, T Ohkubo, K Hono, F Matsukura, H Ohno

Affiliation

¹ Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-0047, Japan.

PMID: 19162400
DOI: 10.1016/j.ultramic.2008.11.011

Abstract

The distribution of Mn in a Ga(0.963)Mn(0.037)As ferromagnetic semiconductor film has been characterized by the three-dimensional atom probe (3DAP) technique. Atom probe specimens were directly prepared from the (Ga,Mn)As film grown epitaxially on a p-type GaAs substrate by the lift-out technique using a scanning electron microscope/focused ion beam system. The atom probe elemental map revealed that the Mn atoms in the Ga(0.963)Mn(0.037)As are uniformly dissolved without forming any nanometer-sized clusters.

Publication types

Research Support, Non-U.S. Gov't