Modification of the Er3+ radiative lifetime from proximity to silicon nanoclusters in silicon-rich silicon oxide

Peter Horak; Wei H Loh; Anthony J Kenyon

doi:10.1364/oe.17.000906

Modification of the Er3+ radiative lifetime from proximity to silicon nanoclusters in silicon-rich silicon oxide

Opt Express. 2009 Jan 19;17(2):906-11. doi: 10.1364/oe.17.000906.

Authors

Peter Horak¹, Wei H Loh, Anthony J Kenyon

Affiliation

¹ Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, United Kingdom.

PMID: 19158905
DOI: 10.1364/oe.17.000906

Abstract

The lifetime of Er3+ in silicon-rich silicon oxide has been reported with quite widely varying values ranging from 9 ms to 2 ms. In this work, we consider the direct impact of silicon nanoclusters on the erbium radiative lifetime, and show that it is a function of the silicon nanocluster size, and also the erbium proximity to the nanocluster.

Publication types

Research Support, Non-U.S. Gov't