Correlation between in Situ Raman scattering and electrical conductance for an individual double-walled carbon nanotube

Nano Lett. 2009 Jan;9(1):383-7. doi: 10.1021/nl803188g.

Abstract

In situ Raman scattering is performed on an individual semiconducting double-walled carbon nanotube (DWNT) in a field-effect transistor (FET) geometry, while the transfer characteristics of the DWNT-FET are measured. Through studying the Raman spectra with response to forward and backward gate voltage (V(gs)) sweeping, respectively, we observe hysteresis loops in the curves of G(-) peak frequency and the intensity ratio of G(-) to G(+) (I(G(-))/I(G(+))) as a function of V(gs). These loops correlate very well with the hysteretic transfer characteristics of the device. The clear correlations suggest that G(-) peak line width and I(G(-))/I(G(+)) increase with the carrier concentration in the DWNT induced by V(gs). In addition, unique G(-) peak line width variations with V(gs) can be attributed to interband electron transitions between the energy bands of two concentric shells of the DWNT excited by G phonons.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Crystallization / methods*
  • Electric Conductivity
  • Macromolecular Substances / chemistry
  • Materials Testing
  • Molecular Conformation
  • Nanotechnology / methods*
  • Nanotubes, Carbon / chemistry*
  • Nanotubes, Carbon / ultrastructure*
  • Particle Size
  • Spectrum Analysis, Raman / methods*
  • Statistics as Topic
  • Surface Properties

Substances

  • Macromolecular Substances
  • Nanotubes, Carbon