Sulphur hexafluoride (SF(6)) gas is a common pollutant emitted during the plasma etching of thin films and plasma cleaning chemical vapor deposition (CVD) production processes used in the semiconductor industry. In this paper a method using microwave (2.45GHz frequency) plasmas sustained at atmospheric pressure for the abatement of SF(6) is investigated experimentally for various gas mixture constituents and operating conditions, with respect to its ability to decompose SF(6) to less harmful molecules. The destruction and removal efficiencies (DRE) of plasma abatement of SF(6) at concentrations between 1.7 and 5% in nitrogen in the presence of water vapor were studied as a function of the total gas flow rate and microwave power. Water vapor proved to be an effective source of free radical species that reacts with the radicals and ions resulting from SF(6) fragmentation in the plasma and also, it proved to reduce the process by-products. It was measured that approximately 25% of the initial SF(6) is converted to SO(2). Destruction and removal efficiencies of SF(6) up to 99.9% have been achieved.