Fabrication of suspended silicon nanowire arrays

Small. 2008 May;4(5):642-8. doi: 10.1002/smll.200700517.

Abstract

A method to fabricate suspended silicon nanowires that are applicable to electronic and electromechanical nanowire devices is reported. The method allows for the wafer-level production of suspended silicon nanowires using anisotropic etching and thermal oxidation of single-crystal silicon. The deviation in width of the silicon nanowire bridges produced using the proposed method is evaluated. The NW field-effect transistor (FET) properties of the device obtained by transferring suspended nanowires are shown to be practical for useful functions.

Publication types

  • Evaluation Study
  • Research Support, Non-U.S. Gov't

MeSH terms

  • Crystallization / methods*
  • Equipment Design
  • Equipment Failure Analysis
  • Macromolecular Substances / chemistry
  • Materials Testing
  • Molecular Conformation
  • Nanotechnology / instrumentation*
  • Nanotechnology / methods
  • Nanotubes / chemistry*
  • Nanotubes / ultrastructure
  • Particle Size
  • Silicon / chemistry*
  • Surface Properties
  • Transistors, Electronic*

Substances

  • Macromolecular Substances
  • Silicon