Near-field investigation of porous silicon photoluminescence modification after oxidation in water

J Microsc. 2008 Mar;229(Pt 3):469-74. doi: 10.1111/j.1365-2818.2008.01930.x.

Abstract

We report on local photo-induced oxidation of porous silicon in water at room temperature. Starting from a nonluminescent sample, the oxidation process induces luminescence which was found to first increase and then decrease as a function of the oxidation time. A clear blue shift is also observed. This effect is believed to be owing to size modification of silicon nanocrystallites and thus is explained in terms of quantum confinement. Optical near-field images and spectrum are used to monitor the photoluminescence modifications after oxidation. As the photoluminescence can be widely tuned in wavelength and intensity, this method offers a way to pattern the emission properties of the sample.

Publication types

  • Research Support, Non-U.S. Gov't