Time-resolved reflectance and transmittance measurements of laser-induced free carriers in germanium, silicon, and zinc selenide at 10.6 microm

Yoshimasa Toyoda; Luis R Elias; William M Yen

doi:10.1364/ao.46.000785

Time-resolved reflectance and transmittance measurements of laser-induced free carriers in germanium, silicon, and zinc selenide at 10.6 microm

Appl Opt. 2007 Feb 10;46(5):785-8. doi: 10.1364/ao.46.000785.

Authors

Yoshimasa Toyoda¹, Luis R Elias, William M Yen

Affiliation

¹ Department of Physics and Astronomy, University of Hawaii at Manoa, Hawaii 96822, USA. toyoda@hawaii.edu

PMID: 17279166
DOI: 10.1364/ao.46.000785

Abstract

We present experimental results of reflectance and transmittance measurements of infrared radiation by high-density photogenerated free carriers in polycrystalline germanium, polycrystalline silicon, and chemical vapor deposition zinc selenide windows. Linearly polarized 1064 and 532 nm wavelength light from a Nd:YAG laser with a 130 ps pulse width were used to generate free carriers in the samples. Reflectance and transmittance were measured at a 10.6 microm wavelength using a linearly polarized CO2 laser.