CN(X(2)Sigma(+)) radicals were produced by the decomposition of BrCN with the microwave discharge flow of Ar under the conditions of Ar pressure in the range of 0.40-0.70 Torr. The laser-induced fluorescence (LIF) spectra of the CN(A(2)Pi(i)-X(2)Sigma(+)), 4-0, 5-1, and 7-2 bands were observed, and their intensities were calibrated against Rayleigh-scattering intensity by Ar atoms, from which the CN(X(2)Sigma(+)) radical density (n(CN(X))) was determined as (0.67+/-0.25) x 10(18) to (4.42+/-0.83) x 10(18) m(-3). Hydrogenated amorphous carbon nitride (a-CN(x):H) films were formed by depositing the CN(X(2)Sigma(+)) radicals on Si substrates in the same reaction system as LIF. The sticking probability (s) of the CN(X(2)Sigma(+)) radicals onto the a-CN(x):H films was determined by using n(CN(X)), the flow speed, and the weight (w) of a-CN(x):H. The s value was determined as (6.4+/-6.4) x 10(-2) to (2.5+/-1.2) x 10(-2), where the errors are predominantly determined by those in n(CN(X)) and w. The procedure described in the present study will provide a methodology to determine the sticking probability of the precursor radicals of the film formation based on the gas-phase LIF spectroscopy.