Direct synthesis of B-C-N single-walled nanotubes by bias-assisted hot filament chemical vapor deposition

W L Wang; X D Bai; K H Liu; Z Xu; D Golberg; Y Bando; E G Wang

doi:10.1021/ja0606733

Direct synthesis of B-C-N single-walled nanotubes by bias-assisted hot filament chemical vapor deposition

J Am Chem Soc. 2006 May 24;128(20):6530-1. doi: 10.1021/ja0606733.

Authors

W L Wang¹, X D Bai, K H Liu, Z Xu, D Golberg, Y Bando, E G Wang

Affiliation

¹ Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China.

PMID: 16704232
DOI: 10.1021/ja0606733

Abstract

Direct synthesis of large-scale ternary boron carbonitride single-walled nanotubes (BCN-SWNTs) via a bias-assisted HFCVD process was presented. The BCN-SWNTs were grown over the powdery Fe-Mo/MgO catalyst by using CH4, B2H6, and ethylenediamine vapor as the reactant gases. As high as 16 atom % nitrogen can be incorporated within the nanotube shells, with the boron content in the range of 2-4 atom %. The ternary covalent bonding nature of the BCN-SWNTs was well characterized, and the B, C, and N elemental maps were clearly imaged by energy-filtered transmission electron microscopy.