Patterning organic semiconductors using "dry" poly(dimethylsiloxane) elastomeric stamps for thin film transistors

Alejandro L Briseno; Mark Roberts; Mang-Mang Ling; Hyunsik Moon; E Joseph Nemanick; Zhenan Bao

doi:10.1021/ja058226v

Patterning organic semiconductors using "dry" poly(dimethylsiloxane) elastomeric stamps for thin film transistors

J Am Chem Soc. 2006 Mar 29;128(12):3880-1. doi: 10.1021/ja058226v.

Authors

Alejandro L Briseno¹, Mark Roberts, Mang-Mang Ling, Hyunsik Moon, E Joseph Nemanick, Zhenan Bao

Affiliation

¹ Department of Chemistry and Biochemistry, University of California--Los Angeles, Los Angeles, California, USA.

PMID: 16551074
DOI: 10.1021/ja058226v

Abstract

This communication demonstrates a method of transferring unreacted low molecular weight (LMW) siloxane oligomers from freshly prepared "dry" PDMS stamps for patterning organic semiconductors and conducting polymers into functional devices via selective wetting. The semiconductors were patterned onto the modified surfaces via dip-coating with well-resolved feature sizes as small as 1 mum. Functional transistor arrays exhibited field-effect mobilities as high as 0.07 cm2/Vs. The proposed printing method eliminates the need to ink SAMs for fabricating patterns and results in a simple, fast, and highly reproducible method of patterning organic semiconductors from solution. The method herein also produced a flexible transistor composed of patterned PEDOT source-drain electrodes.