Magnetic-field-induced band-structure change in CeBiPt

Phys Rev Lett. 2005 Aug 19;95(8):086403. doi: 10.1103/PhysRevLett.95.086403. Epub 2005 Aug 16.

Abstract

We report on a field-induced change of the electronic band structure of CeBiPt as evidenced by electrical-transport measurements in pulsed magnetic fields. Above approximately 25 T, the charge-carrier concentration increases nearly 30% with a concomitant disappearance of the Shubnikov-de Haas signal. These features are intimately related to the Ce 4f electrons since for the non-4f compound LaBiPt the Fermi surface remains unaffected. Electronic band-structure calculations point to a 4f-polarization-induced change of the Fermi-surface topology.