Chemical optimization of self-assembled carbon nanotube transistors

Nano Lett. 2005 Mar;5(3):451-5. doi: 10.1021/nl048032y.

Abstract

We present the improvement of carbon nanotube field effects transistors (CNTFETs) performances by chemical tuning of the nanotube/substrate and nanotube/electrode interfaces. Our work is based on a method of selective placement of individual single walled carbon nanotubes (SWNTs) by patterned aminosilane monolayer and its use for the fabrication of self-assembled nanotube transistors. This method brings a relevant solution to the problem of systematic connection of self-organized nanotubes. The aminosilane monolayer reactivity can be used to improve carrier injection and doping level of the SWNT. We show that the Schottky barrier height at the nanotube/metal interface can be diminished in a continuous fashion down to an almost ohmic contact through these chemical treatments. Moreover, sensitivity to 20 ppb of triethylamine is demonstrated for self-assembled CNTFETs, thus opening new prospects for gas sensors taking advantages of the chemical functionality of the aminosilane used for assembling the CNTFETs.

Publication types

  • Evaluation Study
  • Research Support, Non-U.S. Gov't

MeSH terms

  • Crystallization / methods*
  • Electric Conductivity
  • Equipment Design
  • Equipment Failure Analysis
  • Ethylamines / analysis*
  • Nanotechnology / instrumentation*
  • Nanotechnology / methods
  • Nanotubes, Carbon / analysis
  • Nanotubes, Carbon / chemistry*
  • Nanotubes, Carbon / ultrastructure*
  • Particle Size
  • Reproducibility of Results
  • Sensitivity and Specificity
  • Transducers*
  • Transistors, Electronic*

Substances

  • Ethylamines
  • Nanotubes, Carbon
  • triethylamine