The incorporation of H(3)N(CH(2))(7)NH(3) with CH(3)NH(3)SnI(3) resulted in the formation of a mixed-valent and semiconducting (Eg = 0.84 eV) organic-based perovskite, [H(3)N(CH(2))(7)NH(3)](8)(CH(3)NH(3))(2)Sn(iv)Sn(ii)(12)I(46), with a unique 3D defect-perovskite structure with ordered vacancies at the Sn and I sites.