a-Si:H/SiO2 multilayer films fabricated by radio-frequency magnetron sputtering for optical filters

Hidehiko Yoda; Kazuo Shiraishi; Yuji Hiratani; Osamu Hanaizumi

doi:10.1364/ao.43.003548

a-Si:H/SiO2 multilayer films fabricated by radio-frequency magnetron sputtering for optical filters

Appl Opt. 2004 Jun 10;43(17):3548-54. doi: 10.1364/ao.43.003548.

Authors

Hidehiko Yoda¹, Kazuo Shiraishi, Yuji Hiratani, Osamu Hanaizumi

Affiliation

¹ Graduate School of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya 321-8585, Japan. yoda@cc.utsunomiya-u.ac.jp

PMID: 15219039
DOI: 10.1364/ao.43.003548

Abstract

We examined the optical properties of a-Si:H/SiO2 multilayer films fabricated by radio-frequency magnetron sputtering for optical bandpass filters (BPFs). Because of the high refractive-index contrast between a-Si:H and SiO2, the total number of layers of an a-Si:H/SiO2 multilayer can be relatively small. We obtained an a-Si:H refractive index of 3.6 at lambda = 1550 nm and its extinction coefficient k < 1 x 10(-4) and confirmed by Fourier-transform infrared spectroscopy that such small k is influenced by the Si-H bonding in the film. We fabricated a-Si:H/SiO2 BPFs by using in situ optical monitoring. Thermal tuning of a-Si:H/SiO2 BPF upon a silica substrate was also performed, and a thermal tunability coefficient of 0.07 nm/degree C was obtained.