Hydrogen adsorption on the indium-rich indium phosphide (001) surface: a novel way to produce bridging In-H-In bonds

K Raghavachari; Q Fu; G Chen; L Li; C H Li; D C Law; R F Hicks

doi:10.1021/ja020348p

Hydrogen adsorption on the indium-rich indium phosphide (001) surface: a novel way to produce bridging In-H-In bonds

J Am Chem Soc. 2002 Dec 18;124(50):15119-24. doi: 10.1021/ja020348p.

Authors

K Raghavachari¹, Q Fu, G Chen, L Li, C H Li, D C Law, R F Hicks

Affiliation

¹ Chemical Engineering Department, University of California, Los Angeles, CA 90095, USA.

PMID: 12475358
DOI: 10.1021/ja020348p

Abstract

The indium phosphide (001) surface provides a unique chemical environment for studying the reactivity of hydrogen toward the electron-deficient group IIIA element, indium. Hydrogen adsorption on the In-rich delta(2 x 4) reconstruction produced a neutral, covalently bound bridging indium hydride. Using vibrational spectroscopy and ab initio cluster calculations, two types of bridging hydrides were identified, a (mu-H)In(2) and a (mu-H)(2)In(3) "butterfly-like" structure. These structures were formed owing to the large thermodynamic driving force for adsorption of H atoms on solid-state indium dimers.