In this work, alternative heterojunction devices to be used for gamma-radiation detection are presented. The high quality silicon/polyaniline heterostructures use polyaniline thin films as an active part of the device structure. Polyaniline thin films 40 nm thick were deposited onto silicon substrates (n-type, <100>, 1 ohm x cm) using the spin-coating technique from soluble polyaniline. The devices present excellent electrical characteristics, with a rectification ratio of 60,000 at +/- 1.0 V, reverse currents in the order of a few nA and ideality factor approximately 2. These electrical characteristics indicate great potential for their use in sensor applications. The heterojunction diode is very sensitive to gamma radiation in the dose range of 0-7000 Gy, presenting a linear response in the forward and reverse bias. The excellent electrical characteristics, together with the linear response with the dose strongly suggest the application of this device for spectrometry or dosimetry of low and high doses of gamma ray radiation.